| PART |
Description |
Maker |
| M41ST87WMX6 M41ST87WMX6TR M41ST87YMX6 M41ST87YMX6T |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| FM1208-100DC FM1208-150PC |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Samtec, Inc.
Ramtron International, Corp.
|
| DS1745Y-150-IND DS1745YLPM-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1650Y-70-IND DS1650Y-100-IND DS1650Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Bourns, Inc.
Maxim Integrated Products, Inc.
|
| DS1345YL-70 DS1345YL-70-IND DS1345BL-70 DS1345BL-7 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Cypress Semiconductor, Corp.
|
| M41T56C64MY6F |
Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM
|
意法半导
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40Z300MQ |
NVRAM CONTROLLER for up to EIGHT LPSRAM
|
ST Microelectronics
|
| M40Z111 |
NVRAM Controller for up to Two LPSRAM(NVRAM控制
|
意法半导
|
| AN1011 |
BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST
|
SGS Thomson Microelectronics
|
| M40Z300W 5679 |
NVRAM CONTROLLER for up to EIGHT LPSRAM
From old datasheet system
|
STMicro
|
